Samsung Enterprise SSD PM9A1 512GB M.2 3D NAND PCIe 4.0 x4 (NVMe) Solid State Drive MZVL2512HCJQ-00B00

Samsung

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SKU:
CSMZVL2512HCJQ00B00
MPN: MZVL2512HCJQ-00B00
$148.00
$148.00

Description

PM9A1 512GB Server SSD MZVL2512HCJQ-00B00

The Samsung Enterprise SSD PM9A1 512GB is a high-performance solid-state drive designed for enterprise applications, offering lightning-fast speeds and exceptional reliability. With an M.2 form factor and PCIe 4.0 x4 (NVMe) interface, this SSD delivers outstanding read and write speeds, providing faster data transfer and improved system responsiveness. The 512GB capacity makes it an ideal solution for businesses seeking to optimize their storage systems with high-speed performance for demanding workloads, including databases, virtual environments, and data-intensive applications.

Built with Samsung’s advanced 3D NAND technology, the MZVL2512HCJQ-00B00 SSD ensures long-lasting endurance and superior durability, making it perfect for environments with heavy workloads and high usage. It is designed to withstand high temperatures and heavy I/O operations, offering robust data protection and security features that safeguard critical business data. With its high reliability and consistent performance, the PM9A1 is a top choice for enterprise environments that require fast, secure storage solutions.

The Samsung Enterprise SSD PM9A1 512GB combines the latest PCIe 4.0 technology with energy-efficient performance, helping businesses reduce power consumption while maintaining high-speed data access. Whether you’re looking to upgrade your servers or enhance storage for high-performance computing, this SSD provides an excellent balance of speed, capacity, and reliability. Its advanced features and superior performance make it an ideal choice for businesses seeking to accelerate their storage infrastructure and drive efficiency across their operations.

Specifications

Brand:
Samsung
Weight:
0.30 LBS
Applications:
Server
Series:
PM983
Interface:
Pcie 3.0 X4 (NVMe)
Capacity:
960GB
Sequential Read:
3000 MB/s
Sequential Write:
1100 MB/s
Random Read:
400000 IOPS
Random Write:
38000 IOPS
Form Factor:
M.2 22110